Europe is getting a large-scale GaN power chip line. Infineon will invest around €1.1 billion by 2034 to set up high-volume manufacturing of gallium nitride (GaN) power semiconductors on 300 mm wafers at its existing cleanroom facilities in Villach, Austria, Charged EVs reports. Production is scheduled to start by the end of 2027, with the ramp tied to market demand.
The European Commission has approved €319 million in Austrian state aid for the project (the Commission names it the "Empowering Fab" project) under the European Chips Act framework. The Commission says GaN devices offer superior energy efficiency, greater power density and faster switching than traditional silicon.
Infineon says a 300 mm wafer yields 2.3 times as many chips as a 200 mm wafer, and lists AI data centers, energy infrastructure, e-mobility and robotics among GaN applications. «By establishing high-volume manufacturing on 300-millimeter wafers, we will be the first company in the world to bring gallium nitride power electronics into volume production,» said CEO Jochen Hanebeck.